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Proceedings Paper

Sub-50-nm isolated line and trench width artifacts for CD metrology
Author(s): Marco Tortonese; Gian Lorusso; Rene M. Blanquies; Jerry Prochazka; Luca Grella
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Paper Abstract

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm, arbitrary heights and depths in the range of 100 nm to 2 μm, 90-degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal candidates as Critical Dimension (CD) absolute standards. The sidewall angle can further be varied to create an arbitrary sidewall angle that can be accurately measured.

Paper Details

Date Published: 24 May 2004
PDF: 10 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536812
Show Author Affiliations
Marco Tortonese, VLSI Standards, Inc. (United States)
Gian Lorusso, KLA-Tencor Corp. (United States)
Rene M. Blanquies, VLSI Standards, Inc. (United States)
Jerry Prochazka, VLSI Standards, Inc. (United States)
Luca Grella, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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