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Proceedings Paper

Simulation of the 45-nm half-pitch node with 193-nm immersion lithography
Author(s): Abani M Biswas; Andrew Frauenglass; Steven R. J. Brueck
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Paper Abstract

The minimum half pitch available to a lithography tool is given by the well-known equation Λmin-half. = λ/4nsinθ, where λ is the exposure wavelength, n is the refractive index of the immersion medium and 2θ is the angle between the propagation directions of the two beams. Using water (n = 1.44) as an immersion medium, the highest spatial frequency available with ArF-based (193 nm) lithography tools with an NA of 1.3 (1.44×0.9) corresponds to a half-pitch of 37 nm suggesting that the 45-nm half-pitch node should be accessible. A detailed simulation study (PRO-LITH 8) is reported for two different approaches to printing for this node. Dipole illumination (with two masks) as well as imaging interferometric lithography (with a single mask and multiple exposures incorporating pupil plane filters) is shown to be capable of printing arbitrary structures under these conditions. Because of the loss of contrast for TM-polarization at the high spatial frequencies at this node the high spatial frequencies in the x- and y-directions need to be printed with different polarizations in order to retain the necessary contrast. This, in turn, will require modification of the illumination system or a multiple exposure approach to allow the necessary polarization control.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536787
Show Author Affiliations
Abani M Biswas, CHTM/Univ. of New Mexico (United States)
Andrew Frauenglass, CHTM/Univ. of New Mexico (United States)
Steven R. J. Brueck, CHTM/Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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