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Proceedings Paper

Qualification of a low-cost high-quality reticle process for 90-nm contact layers
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Paper Abstract

Reticle costs are increasing as users tighten specifications to accommodate the shrinking process windows in advanced semiconductor lithography. Tighter specs often drive the use of e-beam based mask processes, which produce better mask pattern acuity than laser-based tools but suffer lower throughput (and thus higher costs). In some cases, such as contacts, the pattern acuity of an e-beam tool does not seem to be required -- but the tight effective CD uniformity typically produced by an e-beam mask writer is still necessary to prevent wafer level defect problems. This presents problems for the maskshop (e.g., low yield and long cycle time) as well as for the fab (more expensive new product introduction, uncertainty in mask delivery). This paper describes the results of qualifying a low cost, high quality mask making process for 90nm wafer production. The process uses a DUV laser-based mask writer to achieve low cost. Wafer photolithography process results using two masks fabricated with different mask making processes are presented, along with comparative electrical performance.

Paper Details

Date Published: 24 May 2004
PDF: 8 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536712
Show Author Affiliations
Kirk J. Strozewski, Motorola (United States)
Joe Perez, Motorola (United States)
Rusty Carter, Motorola (United States)
Robert Kiefer, DuPont Photomasks, Inc. (United States)
Curt Jackson, DuPont Photomasks, Inc. (United States)
Susan MacDonald, DuPont Photomasks, Inc. (United States)
Franklin Kalk, DuPont Photomasks, Inc. (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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