Share Email Print
cover

Proceedings Paper

An image stitching method to eliminate the distortion of the sidewall in linewidth measurement
Author(s): Xuezeng Zhao; Joseph Fu; Wei Chu; Cattien Nguyen; Theodore V. Vorburger
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Nano-scale linewidth measurements are performed in semiconductor manufacturing, the data storage industry, and micro-mechanical engineering. It is well known that the interaction of probe and sample affects the measurement accuracy of linewidth measurements performed with atomic force microscopy (AFM). The emergent ultra-sharp carbon nanotube tips provide a new approach to minimizing the distortion of the measured profile caused by interaction with the finite probe tip. However, there is nearly always a significant tilt angle resulting when the nanotube is attached to an ordinary probe. As a result, we can obtain an accurate sidewall image of only one side of the linewidth sample rather than two sides. This somewhat reduces the advantage of using nanotube probes. To solve this problem, a dual image stitching method based on image registration is proposed in this article. After the first image is obtained, which provides an accurate profile of one side of the measured line, we rotate the sample 180° to obtain the second image, which provides an accurate profile of the other side of the line. We keep the sidewall data for the better side of each image and neglect the data taken for the other side of each image. Then, we combine these better two sides to yield a new image for which the linewidth can be calculated.

Paper Details

Date Published: 24 May 2004
PDF: 11 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536692
Show Author Affiliations
Xuezeng Zhao, Harbin Institute of Technology (China)
Joseph Fu, National Institute of Standards and Technology (United States)
Wei Chu, Harbin Institute of Technology (China)
Cattien Nguyen, Eloret Corp. (United States)
NASA Ames Research Ctr. (United States)
Theodore V. Vorburger, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

© SPIE. Terms of Use
Back to Top