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Proceedings Paper

First results from AIMS beta tool for 157-nm lithography
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Paper Abstract

In modern mask manufacturing, a successful defect mitigation strategy has been become crucial to achieve defect free masks for high-end lithography. The basic steps of such a strategy include inspection, repair, and subsequent post-repair qualification of repair sites. For the latter task, actinic aerial image measurements have been proven to be the technique of choice to assess the printability of a repaired site. In the last three years, International SEMATECH in cooperation with Infineon/AMTC-Dresden and SELETE, funded a joint development project at Carl Zeiss to develop an AIMS tool operating at the 157nm wavelength. The three beta tools were shipped in 2003 to the three beta customer sites. In this paper are presented the first results obtained with these beta tools, including measurements on binary as well as alternating phase shift masks. The technical properties of the tool were discussed with regards to the capability of the tool for defect qualification on photomasks. Additionally, preliminary results of the evaluation of alternating phase shift masks will be discussed, including measurements performed on dense lines-and-spaces structures with various pitch sizes.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536670
Show Author Affiliations
Silvio Teuber, Advanced Mask Technology Ctr. (Germany)
Iwao Higashikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Jan-Peter Urbach, International SEMATECH (United States)
Christof M. Schilz, Infineon Technologies AG (Germany)
Roderick Koehle, Infineon Technologies AG (Germany)
Axel M. Zibold, Carl Zeiss (Germany)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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