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Proceedings Paper

Reticle surface contaminants and their relationship to sub-pellicle defect formation
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Paper Abstract

DUV lithography induced sub-pellicle particle formation continues to be a significant problem in semiconductor fabs. We have previously reported on the identification of various defects detected on reticles after extended use. This paper provides a comprehensive evaluation of various molecular contaminants found on the backside surface of a reticle used in high-volume production. Previously all or most of the photo-induced contaminants were detected under the pellicle. This particular contamination is a white “haze” detected by pre-exposure inspection using KLA-Tencor TeraStar STARlight with Un-patterned Reticle Surface Analysis, (URSA). Chemical analysis was done using Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) and Raman spectroscopy.

Paper Details

Date Published: 24 May 2004
PDF: 8 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536584
Show Author Affiliations
Brian J. Grenon, Grenon Consulting, Inc. (United States)
Kaustuve Bhattacharyya, KLA-Tencor Corp. (United States)
William Waters Volk, KLA-Tencor Corp. (United States)
Khoi A. Phan, Advanced Micro Devices, Inc. (United States)
Andre Poock, Advanced Micro Devices Saxony LLC and Co. KG (Germany)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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