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Proceedings Paper

193-nm negative resist based on acid-catalyzed elimination of polar molecules
Author(s): Ratnam Sooriyakumaran; Blake W. Davis; Carl E. Larson; Phillip J. Brock; Richard A. DiPietro; Thomas I. Wallow; Eric F. Connor; Linda K. Sundberg; Gregory Breyta; Robert D. Allen; Kaushal S. Patel; Pushkara Rao Varanasi
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Paper Abstract

Development of 193-nm negative resists that meet the stringent performance requirements of sub-100 nm resolution with conventional 0.26 N TMAH developer has proven to be a significant challenge. Most of the systems that are currently under development are based on cross-linking mechanisms. They commonly suffer from image distortion caused by micro-bridging. An alternative approach is to look at polarity switch mechanisms. We have investigated the acid-catalyzed elimination of polar molecules as one such mechanism which may provide a pathway to develop negative resists that do not suffer from micro-bridging.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.536432
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Blake W. Davis, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
Richard A. DiPietro, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)
Eric F. Connor, IBM Almaden Research Ctr. (United States)
Linda K. Sundberg, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Kaushal S. Patel, IBM Microelectronics Div. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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