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Proceedings Paper

Successful application of angular scatterometry to process control in sub-100-nm DRAM device
Author(s): Jin-ah Kim; Seong-Jin Kim; Soo-Bok Chin; Seok-Hwan Oh; Doo-Hoon Goo; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon; Christopher J. Raymond; Michael E. Littau; Byungjoo James Youn; Chang-Jin Sohn
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Paper Abstract

As DRAM (Dynamic Random Access Memory) device continuously decreases in chip size, an increased speed and more accurate metrology technique is needed to measure CD (critical dimension), film thickness and vertical profile. Scatterometry is an optical metrology technique based on the analysis of scattered (or diffracted) light from periodic line and space grating and uses 2θ angular method (ACCENT Optical Technologies CDS-200). When a light source is irradiated into the periodic pattern, the scattered intensity signal of zero-th order as a function of incident angle is measured. By analyzing these scattered signals, various parameters of the periodic pattern such as CD, vertical profile, mapping of substrate structure, film thickness and sidewall angle can be determined. Advantages of scatterometry are that drastic decreased measuring time and acquirement of CD, vertical profile, film thickness and sidewall angle by just one measurement. In this paper we will discuss various applications of scatterometry to sub-100nm DRAM structures of straight line and space and curved line and space patterns. Details of the correlation with CD-SEM (Scanning Electron Microscope) of standard metrology tool and repeatability of measured CD values will be discussed. As diverse applications, results of in-field, in-wafer and wafer-to-wafer CD monitoring, STI (Shallow Trench Isolation) depth monitoring and matching of vertical profile with V-SEM (Vertical SEM) will be also presented.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536312
Show Author Affiliations
Jin-ah Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Jin Kim, Samsung Electronics Co., Ltd. (South Korea)
Soo-Bok Chin, Samsung Electronics Co., Ltd. (South Korea)
Seok-Hwan Oh, Samsung Electronics Co., Ltd. (South Korea)
Doo-Hoon Goo, Samsung Electronics Co., Ltd. (South Korea)
Suk-Joo Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Christopher J. Raymond, Accent Optical Technologies, Inc. (United States)
Michael E. Littau, Accent Optical Technologies, Inc. (United States)
Byungjoo James Youn, Accent Optical Technologies, Inc. (South Korea)
Chang-Jin Sohn, Accent Optical Technologies, Inc. (South Korea)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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