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Proceedings Paper

Development of an accurate empirical model for ArF lithography
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Paper Abstract

“Dose-MEF” was measured on ArF and KrF resists. The “dose-MEF” is very important factor for mask making spec. Conventional lithography simulation such as “Diffused aerial image simulation” does not predict the ArF experimental value precisely. In order to explain the dose-MEF of ArF resist, we introduce intensity biasing. The intensity biasing is caused by flare of exposure tool and another mechanism. The intensity biasing reduces the dose-MEF. Small dose-MEF leads to the relaxed mask spec.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536279
Show Author Affiliations
Shoji Mimotogi, Toshiba Corp. (Japan)
Daisuke Kawamura, Toshiba Corp. (Japan)
Takashi Sato, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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