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Proceedings Paper

Fulfillment of model-based OPC for contact patterns in 60-nm level logic device
Author(s): Sang-Wook Kim; Sung-Woo Lee; Chang-Min Park; Soo-Han Choi; Young-Mi Lee; Yool Kang; Gi-Sung Yeo; Jung-Hyeon Lee; Han-Ku Cho; Woo-Sung Han
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Paper Abstract

Dummy contact generation procedure to apply off-axis illumination (OAI) to a contact layer in a 60 nm node device is described. The model based optical proximity correction (OPC) is also adopted to control the on-chip variation (OCV). The dummy contact size of 110 nm with the space distance of 90 nm between the main and dummy contact is used. By applying OPCed contact, the proximity variation is reduced less than 11 nm from 49 nm. The modeling methods are assessed by comparing delta edge placement error (EPE) values, which represent the model accuracy. The VTR_E model is shown to well correct the proximity variation, and it is adopted in our experiment. Applying to the arbitrary patterns of logic device and to generate more dummy patterns, the rule needs to be modified. The modified rule includes the dummy merge method, and the dummy contacts are automatically generated for the contact layer of 60 nm node logic device.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536268
Show Author Affiliations
Sang-Wook Kim, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woo Lee, Samsung Electronics Co., Ltd. (South Korea)
Chang-Min Park, Samsung Electronics Co., Ltd. (South Korea)
Soo-Han Choi, Samsung Electronics Co., Ltd. (South Korea)
Young-Mi Lee, Samsung Electronics Co., Ltd. (South Korea)
Yool Kang, Samsung Electronics Co., Ltd. (South Korea)
Gi-Sung Yeo, Samsung Electronics Co., Ltd. (South Korea)
Jung-Hyeon Lee, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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