Share Email Print
cover

Proceedings Paper

Beam quality of a new-type MOPO laser system for VUV laser lithography
Author(s): Osamu Wakabayashi; Tatsuya Ariga; Takahito Kumazaki; Koutarou Sasano; Takayuki Watanabe; Takayuki Yabu; Tsukasa Hori; Kouji Kakizaki; Akira Sumitani; Hakaru Mizoguchi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

ArF-dry microlithography is currently switching from pre-production to mass-production and the target node is shifted from 90 nm to 65 nm. ArF-wet or F2 laser lithography will then be an important player for the next generation node below 45 nm. Therefore, high throughput and high-resolution exposure tools for VUV lithography require VUV light sources (ArF and F2 lasers) with high power and narrow bandwidth. In this paper, we describe the beam quality of the new- type injection lock (MOPO, master oscillator power oscillator) ArF laser system we developed and compare it with the beam quality of a master oscillator power amplifier (MOPA) ArF laser system. A high power and narrow bandwidth ArF laser can be achieved with twin laser chambers in a MOPA or an injection lock laser configuration. Compared to the MOPA system, the injection lock laser system has an excellent performance (e.g. high efficiency, long pulse duration and narrow spectrum). On the other hand, the injection lock system has some disadvantages in beam quality showing high spatial coherence, broadband emission and having a beam profile with a hole. These technical issues have been solved, however, with the following two new breakthrough-technologies: (1) a new-type injection lock system having low spatial coherence and a beam profile with no hole and (2) the optimization of the injection seed energy and discharge timing between the twin chambers for low broadband emission. The spatial coherence, the broadband spectrum and the beam profile of the new-type injection lock system were measured with a Young’s interferometer, a wide range spectrometer with etalons and a 2-dimensional beam profiler, respectively. The new-type injection lock ArF laser system had a lower spatial coherence than a conventional injection lock system, a very low broadband emission level thus preventing deterioration of exposure tools resolution, and a beam profile with no hole. Moreover, we reconfirmed that the new-type injection lock system has the same excellent performance as the conventional injection lock system.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536241
Show Author Affiliations
Osamu Wakabayashi, Komatsu Ltd. (Japan)
Tatsuya Ariga, Komatsu Ltd. (Japan)
Takahito Kumazaki, Komatsu Ltd. (Japan)
Koutarou Sasano, Komatsu Ltd. (Japan)
Takayuki Watanabe, Komatsu Ltd. (Japan)
Takayuki Yabu, Komatsu Ltd. (Japan)
Tsukasa Hori, Komatsu Ltd. (Japan)
Kouji Kakizaki, Ushio Inc. (Japan)
Akira Sumitani, Komatsu Ltd. (Japan)
Hakaru Mizoguchi, Gigaphoton Inc. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

© SPIE. Terms of Use
Back to Top