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Proceedings Paper

Electron beam inspection system for semiconductor wafer based on projection electron microscopy
Author(s): Tohru Satake; Nobuharu Noji; Takeshi Murakami; Manabu Tsujimura; Ichirota Nagahama; Yuichiro Yamazaki; Atsushi Onishi
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Paper Abstract

Optical inspection systems and/or electron beam inspection systems are quite useful tools for the yield management in the semiconductor process. However, they have some issues of difficulties for the application to the yield management after 100nm-technology node generation. Optical inspection systems have a resolution limit by diffraction phenomena. On the other hand, electron beam inspection systems based on scanning electron microscopy (EBI-SEM) have the limit of inspection speed. Both limits are serious matter for the application to yield management after 100nm-technology node generation. We have developed the electron beam inspection system based on projection electron microscopy (EBI-PEM), having both performances of inspection speed of optical types and spatial resolution of EBI-SEM. The system has been improved on the signal electron collection efficiency and transmittance of the electron optical system. We also have developed high rate and sensitive signal detection system. Then we considered that the inspection speed of several times faster than the conventional EBI-SEM is feasible at the spatial resolution less than 100nm.

Paper Details

Date Published: 24 May 2004
PDF: 10 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.536202
Show Author Affiliations
Tohru Satake, Ebara Corp. (Japan)
Nobuharu Noji, Ebara Corp. (Japan)
Takeshi Murakami, Ebara Corp. (Japan)
Manabu Tsujimura, Ebara Corp. (Japan)
Ichirota Nagahama, Toshiba Corp. (Japan)
Yuichiro Yamazaki, Toshiba Corp. (Japan)
Atsushi Onishi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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