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Proceedings Paper

Determination of the flare specification and methods to meet the CD control requirements for the 32-nm node using EUVL
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Paper Abstract

The minimum gate CD for the 32 nm node is 15 nm and the CD control requirement on the gate CD is < 2.5 nm 3σ. One of the major concerns for meeting these targets using EUV lithography is flare. Flare degrades the aerial image contrast which decreases the process window, and within-die chrome density variation results in local flare variation which worsens the CD control. Since mirror roughness contributes to flare, mirror polishing needs to be improved so that the Mid Spatial Frequency Roughness (MSFR) will be reduced to < 0.14 nm/mirror for 6 mirror imaging systems. In this paper, we will determine the minimum acceptable flare for the 32 nm node to meet the CD target and control requirements using modeling and present methods to meet them as demonstrated by experiments run on the Engineering Test Stand (ETS). Effectiveness of flare mitigation methods using chrome dummification and negative tone resists are quantified, and the capability of Flare Variation Compensation (FVC) to meet CD control targets are verified experimentally.

Paper Details

Date Published: 20 May 2004
PDF: 10 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.536024
Show Author Affiliations
Manish Chandhok, Intel Corp. (United States)
Sang H. Lee, Intel Corp. (United States)
Christof Krautschik, Intel Corp. (United States)
Bryan J. Rice, Intel Corp. (United States)
Eric Panning, Intel Corp. (United States)
Michael Goldstein, Intel Corp. (United States)
Melissa Shell, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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