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Proceedings Paper

Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists
Author(s): Vivek M. Prabhu; Michael X. Wang; Erin L. Jablonski; Bryan D. Vogt; Eric K. Lin; Wen-Li Wu; Dario L. Goldfarb; Marie Angelopoulos; Hiroshi Ito
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Paper Abstract

Organic polar solvent (1-butanol) versus aqueous base (tetramethylammonium hydroxide, (TMAH)) development quality are distinguished by neutral versus charged polymer (polyelectrolyte) dissolution behavior of photoresist bilayers on silicon substrates comprising poly(4-hydroxystyrene) and poly(4-tert-butoxycarbonyloxystyrene), PHOSt and PBOCSt, respectively. This model line-edge was broadened by photoacid catalyzed deprotection to a final interfacial width of 35.7 Å and subjected to different developers. 1-butanol develops with an increased penetration depth than aqueous base development consistent with an increased solubility of the protected containing component in the organic solvent. This enhanced dissolution with the polar solvent results in an increased surface roughness of 73 Å, whereas the development with TMAH at concentrations between (0.1 to 1.1) M1 leads to surface roughness between (4.5 to 14.4) Å, as measured by atomic force microscopy. These measurements suggest that the elimination of resist swelling, in the presence of a protection gradient, is a viable strategy to reduce roughness and control critical dimensions. The influence of added salt to developer solutions was also examined by developing the model bilayer. A decrease in surface roughness from (10 to 6.5) Å was observed between (0 to 0.70) M KCl in 0.26 M TMAH.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535862
Show Author Affiliations
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Michael X. Wang, National Institute of Standards and Technology (United States)
Erin L. Jablonski, National Institute of Standards and Technology (United States)
Bryan D. Vogt, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-Li Wu, National Institute of Standards and Technology (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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