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Proceedings Paper

Surface conditioning solutions to reduce resist line roughness
Author(s): Peng Zhang; Manuel Jaramillo; Madhukar B. Rao; Colin Yates; Danielle M. King; Brenda F. Ross; Bridget L. O'Brien
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Paper Abstract

In this study, surface conditioning solutions were used during post-develop process to enhance the 193 nm lithography performance. These solutions were applied to the wafer surface in a surface treatment step between the DI water rinse and drying steps. Compared to the standard develop process, the formulated surface conditioning solution enabled a 24% reduction in line width roughness, particularly in the high frequency roughness components. The solution also improved the pattern collapse performance by enlarging the non-collapse window and extending the minimum CD feature size by 10 nm. Additional benefits provided by the formulated surface conditioner solution were minimal changes to CD and resist profile.

Paper Details

Date Published: 14 May 2004
PDF: 6 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535819
Show Author Affiliations
Peng Zhang, Air Products and Chemicals, Inc. (United States)
Manuel Jaramillo, Air Products and Chemicals, Inc. (United States)
Madhukar B. Rao, Air Products and Chemicals, Inc. (United States)
Colin Yates, LSI Logic Corp. (United States)
Danielle M. King, Air Products and Chemicals, Inc. (United States)
Brenda F. Ross, Air Products and Chemicals, Inc. (United States)
Bridget L. O'Brien, Air Products and Chemicals, Inc. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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