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Proceedings Paper

E-beam proximity effect parameters for sub-100nm features
Author(s): Keith R Mountfield; Andrew R. Eckert; XiaoMin Yang; Earl C. Johns
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Paper Abstract

Understanding the proximity effect is crucial to fabricating repeatable sub-100 nm features for magnetic recording devices. Top down CD-SEM measurements have been used to measure the proximity effect parameters in negative and positive resists at dimensions below 100 nm. The goal of this work is to experimentally determine the values of the parameters α, β and η and what they depend on.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535766
Show Author Affiliations
Keith R Mountfield, Seagate Technology LLC (United States)
Andrew R. Eckert, Seagate Technology LLC (United States)
XiaoMin Yang, Seagate Technology LLC (United States)
Earl C. Johns, Seagate Technology LLC (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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