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Proceedings Paper

Resist formulation effects on contrast and top-loss as measured by 3D-SEM metrology
Author(s): Andrew R. Eckert; Carl Seiler; Robert L. Brainard
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Paper Abstract

We have implemented 3D-SEM metrology to measure resist height as a function of dose for negative e-beam resists. Converting the resist height to a dissolution rate produces a new way to determine resist contrast. We have used this method to demonstrate improved aspect ratios for a low contrsat resist compared to a high contrast resist. We have also found that increasing the cross-linker concentration causes an increase in the resist dissolution rate and contrast. We have measured this change in contrast using the 3D-SEM technique for three resists systems with varying cross-linker concentration. We have plotted the dissolution rate as a function of e-beam exposure intensity, and used this information to model how contrast effects the final resist profile. Both the model and the experimental data suggest that the higher contrast resist gives a straighter side-wall angle with a negligible effect on the final CD.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (14 May 2004); doi: 10.1117/12.535723
Show Author Affiliations
Andrew R. Eckert, Seagate Technology LLC (United States)
Carl Seiler, Seagate Technology LLC (United States)
Robert L. Brainard, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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