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Proceedings Paper

EUV resist imaging below 50 nm using coherent spatial filtering techniques
Author(s): Michael D. Shumway; Eric L. Snow; Kenneth A. Goldberg; Patrick Naulleau; Heidi Cao; Manish Chandhok; James Alexander Liddle; Erik H. Anderson; Jeffrey Bokor
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Paper Abstract

Lithography results using spatially-filtered coherent EUV radiation are presented. These experiments were done using a new 10× Schwarzschild optic and other significant upgrades for high stability and throughput of the system. Included are both single- and multiple-pitch images. A chemically-amplified EUV resist is shown performing at dense 50-nm linewidths and loose 25-nm features. High resolution polymers (HSQ and PMMA) were also tested and demonstrate dense 40-nm linewidths, which are the smallest 1:1 multi-pitch features attempted at this time.

Paper Details

Date Published: 20 May 2004
PDF: 6 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.535666
Show Author Affiliations
Michael D. Shumway, Univ. of California/Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Eric L. Snow, Univ. of California/Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Heidi Cao, Intel Corp. (United States)
Manish Chandhok, Intel Corp. (United States)
James Alexander Liddle, Lawrence Berkeley National Lab. (United States)
Erik H. Anderson, Lawrence Berkeley National Lab. (United States)
Jeffrey Bokor, Univ. of California/Berkeley (United States)
Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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