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Proceedings Paper

Advances in vortex via fabrication
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Paper Abstract

Vortex masks composed of rectangles with nominal phases of 0°, 90°, 180° and 270° have been shown to print sub-100nm vias and via arrays when projected into negative resist using 248nm light. Arrays with pitches down to 210nm and CDs as small as 64nm have been reported. While promising, 248nm vortex via images showed some anomalies: The developed contacts were somewhat elliptical, with four different repeating via shapes. The common depth of focus for these four classes of via was limited by their different behaviors through focus. Phase edges in isolated vortex pair structures tended to print, also limiting the useful DOF. These issues can be ameliorated by employing 193nm illumination and a new negative-tone resist. Smaller NAs and higher coherence extend the common depth of focus and larger NAs can be used to print even more tightly spaced patterns. Advanced optical proximity correction techniques can also be applied to reduce the via ellipticity and placement error, and a more optimal choice of geometrical phase depth reduces pattern variability. Further developments and incremental improvements in vortex via design and processing may make it the method of choice for via patterning at the 45nm node.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535652
Show Author Affiliations
Marc David Levenson, M.D. Levenson Consulting (United States)
Takeaki Joe Ebihara, Canon USA, Inc. (United States)
Michael Reilly, Shipley Co. Inc. (United States)
George Barclay, Shipley Co. Inc. (United States)
Vaishali Vorha, Shipley Co. Inc. (United States)
Carolyne Stafford, Shipley Co. Inc. (United States)
Martin E. Mastovich, Soluris Inc. (United States)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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