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Proceedings Paper

Shrink assist film for enhanced resolution (SAFIER) process for printing of 20-nm trench with high aspect ratio
Author(s): XiaoMin Yang; Harold Gentile
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Paper Abstract

SAFIERTM process has been applied to electron beam lithography for the fabrication of the write pole for thin film heads (TFH). The SAFIER process is a physical shrinkage process designed to shrink trench patterns and contact holes with very little deterioration of the profile. This process also improves line edge roughness (LER). In this paper, we will present the experimental results about our evaluation of the SAFIER process for write pole process. To understand the SAFIER process, our evaluation will focus on the following key processing issues: 1) SAFIER resolution capability; 2) repetition of the SAFIER process; 3) process optimization for the minimum CD variation; 4) resist sidewall profile; and 5) LER with the SAFIER process. We demonstrate the capability of printing narrow write pole trench patterns with a critical dimension (CD) of 20 nm in 0.30 μm resist (aspect ratio=15:1) and a CD of 30 nm in 0.60 μm resist (aspect ratio=20:1) using the electron beam SAFIER process.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.535647
Show Author Affiliations
XiaoMin Yang, Seagate Technology LLC (United States)
Harold Gentile, Seagate Technology LLC (United States)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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