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Proceedings Paper

Fast resist modeling and its application in 193nm lithography
Author(s): Lei Yuan; Andrew R. Neureuther; Ebo H. Croffie
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Paper Abstract

A new resist threshold model based on image behaviors on directions parallel as well as normal to feature edges has been developed for predicting critical dimensions (CD) of two-dimension patterns. In this new model (2D-RTM), resist threshold is assumed as a second-order polynomial function of five image parameters that consist of image intensity and slope. Extensive verifications of 2D-RTM have been done by using both rigorous resist models and experimental measurements. 2D-RTM is found to be a good approximation of rigorous model within certain range of dose and defocus variation. For 130nm technology in LSI Logic, 2D-RTM improves CD prediction accuracy for typical 2D patterns to a maximum error of 3.1nm and average of 1.21nm, which gives an improvement of a factor of two compared with conventional resist threshold model.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535564
Show Author Affiliations
Lei Yuan, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Ebo H. Croffie, LSI Logic Corp. (United States)

Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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