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Proceedings Paper

Usage of overlay metrology simulator in design of overlay metrology tools for the 65-nm node and beyond
Author(s): Yariv Simovitch; Shahar Gov
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Paper Abstract

The requirement for state-of-the-art performance by overlay metrology at the 65nm technology node drives the development and design of new optical metrology solutions. The use of measurement modeling is increasing, affecting the tool concepts, tolerances, and calibrations, as well as the overlay target design. In this article, we present our overlay metrology simulation platform, developed in-house, and its central role in optical performance modeling. The simulation validation tests are presented using standard overlay test wafers. The impact of residual optical aberrations with different overlay targets is simulated, emphasizing the degree of control needed to support overlay measurement methodology.

Paper Details

Date Published: 24 May 2004
PDF: 12 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535400
Show Author Affiliations
Yariv Simovitch, Nova Measuring Instruments, Ltd. (Israel)
Shahar Gov, Nova Measuring Instruments, Ltd. (Israel)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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