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Proceedings Paper

Characterizing SiOx Ny ARC materials with laser ellipsometry and DUV reflectometry
Author(s): Gary Guangbin Jiang; Timothy Sun; Donald Pelcher; Jana Clerico; Jui-Ping Li; Yi-Ru Chen
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Paper Abstract

SiOXNYARCs are critical for maintaining CD control in current and future generations of designs. However, even minor fluctuations in t, n, and k across the wafer, or from wafer to wafer, can have a significant impact on ARC performance. For process control of ARC deposition, metrology tools must be able to reproducibly measure thickness and optical properties to 6 σ, translating into 1.5 Å for a nominally 500 Å SiOXNYARC and 0.0015 for index. A combination of laser ellipsometry and DUV reflectometry has demonstrated the ability to meet these requirements, with two tool-matching results of 0.8 Å for thickness and 0.001 for index. The accuracy of the thickness measurements was further tested at SiOXNYARC films were etched to clear. TEM confirmation of thickness measurements demonstrated the metrology was accurate with films as thin as 75 Å. The metrology method was subsequently used to monitor both the thickness and reflectivity at 49-points across a wafer at various etch times until the film was thinner than 25 Å.

Paper Details

Date Published: 24 May 2004
PDF: 7 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535264
Show Author Affiliations
Gary Guangbin Jiang, Rudolph Technologies, Inc. (United States)
Timothy Sun, Rudolph Technologies, Inc. (United States)
Donald Pelcher, Rudolph Technologies, Inc. (United States)
Jana Clerico, Rudolph Technologies, Inc. (United States)
Jui-Ping Li, Silicon Integrated Systems Corp. (Taiwan)
Yi-Ru Chen, Silicon Integrated Systems Corp. (Taiwan)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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