Share Email Print

Proceedings Paper

Effect of inline dose and focus monitoring and control on post-etch CD
Author(s): Berta A. Dinu; Venkatram Subramony; Pei Chin Lim; Dawn Goh; Brad J. Eichelberger; Kwong Boo Chew; Kevin M. Monahan
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Due to the continuous shrinking of the design rules and, implicitly, of the lithographic process window, it becomes more and more important to implement a dynamic, on product, process monitoring and control based on both dose and focus parameters. The method we present targets lot-to-lot, inter-field and intra-field dose and focus effect monitoring and control. The advantage of simultaneous dose and focus control over the currently used CD correction by adjusting exposure dose only is visible in improvement of the CD distributions both at pre-etch and at post-etch phases. The 'On Product' monitoring and compensation is based on the optical measurement of a special compact line end shortening target which provides the unique ability to separate dose from focus on production wafers.

Paper Details

Date Published: 24 May 2004
PDF: 6 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535241
Show Author Affiliations
Berta A. Dinu, KLA-Tencor Corp. (United States)
Venkatram Subramony, TECH Semiconductor (Singapore)
Pei Chin Lim, TECH Semiconductor (Singapore)
Dawn Goh, TECH Semiconductor (Singapore)
Brad J. Eichelberger, KLA-Tencor Corp. (United States)
Kwong Boo Chew, KLA-Tencor Corp. (United States)
Kevin M. Monahan, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

© SPIE. Terms of Use
Back to Top