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Experimental verification of a model based decomposition method for double dipole lithography
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Paper Abstract

Double Dipole Lithography (DDL) is one of the candidates for extending optical lithography into the k1=0.30 regime. In 2001 the first experimental 2D elbow structures were reported. In 2002 a rule based decomposition and a model assisted decomposition method were presented. In 2003 a new, model based decomposition step has been presented. Now we present the results of applying this model based decomposition by discussing the first experimental results on a 0.75 NA ArF scanner printing 70 nm lines at various pitches (160 nm and larger, i.e. k1=0.31 and up). We provide an assessment of the current state of maturity of the DDL technology for the low-k1 regime (0.3..0.4). This is based upon CD uniformity, 2D pattern fidelity and through pitch process latitude behavior.

Paper Details

Date Published: 28 May 2004
PDF: 12 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535221
Show Author Affiliations
Mark Eurlings, ASML (Netherlands)
Stephen D. Hsu, ASML (United States)
Eric Hendrickx, IMEC (Belgium)
Willem op 't Root, Technische Univ. Eindhoven (Netherlands)
Thomas L. Laidig, ASML (United States)
Tsann-Bim Chiou, ASML (Taiwan)
Alek Chen, ASML (Taiwan)
Fung Chen, ASML (United States)
Geert Vandenberghe, IMEC (Belgium)
Jo Finders, ASML (Netherlands)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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