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Proceedings Paper

193-nm resist roughness characterization and process propagation investigation using a CD-SEM
Author(s): Thomas Marschner; Anice Lee; Stefan Fuchs; Lars Voelkel; Christian Stief
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Paper Abstract

We use the LER measurement capabilities of the Applied Materials NanoSEM 3D CD-SEM for the determination of LER for different manufacturing steps of the DRAM gate layer for the 90 nm technology node and below (after develop, after hard mask-open and final inspection steps). The system allows the fully automatic measurement of the LER as a 3 sigma value for top as well as bottom LER and yields also information about the spatial frequency along the line edge. We demonstrate precision of LER measurements (3 sigma) of less than 10% of the LER for resist structures as well as for etched structures with random or artificial LER within a range from 4 to 20 nm LER. The results agree with the requirements of the ITRS roadmap for structures down to 70 nm. We show on etched poly wafers containing artificial LER that the identification of discrete frequencies is possible down to LER values of below 5 nm (3 sigma). Based on these result we investigate LER on product wafers and show that the LER of left and right line edge, repsectively, are independent of each other. Additionally, no significant discrete frequencies are detected for all process steps under investigation, although the LER amplitude varies significantly in dependence of process conditions.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535214
Show Author Affiliations
Thomas Marschner, Infineon Technologies AG (Germany)
Anice Lee, Infineon Technologies AG (Germany)
Stefan Fuchs, Infineon Technologies AG (Germany)
Lars Voelkel, Infineon Technologies AG (Germany)
Christian Stief, Applied Materials GmbH (Germany)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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