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Proceedings Paper

Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis
Author(s): George P. Patsis; Vassilios Constantoudis; Evangelos Gogolides
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Paper Abstract

A fast 2D/3D resist dissolution algorithm is used to quantify line-edge roughness and determine its relation to resist material parameters, such as the polymerization length distribution, the end-to-end distance and the radius of gyration, along with the effects of acid-diffusion. The same relation between surface roughness and exposure dose known to hold experimentally is also shown to be valid for line-edge roughness. Increasing average polymerization length results in increased values of line-edge roughness, radius of gyration and end-to-end distance establishing an immediate relation between material properties and measured line-edge roughness (LER). The effects of the edge depth and length of measurement and of the free volume on LER vs. are also investigated.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535202
Show Author Affiliations
George P. Patsis, Institute of Microelectronics, NCSR Demokritos (Greece)
Vassilios Constantoudis, Institute of Microelectronics, NCSR Demokritos (Greece)
Evangelos Gogolides, Institute of Microelectronics, NCSR Demokritos (Greece)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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