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Proceedings Paper

Edge die focus-exposure monitoring and compensation to improve CD distributions
Author(s): Brad J. Eichelberger; Venkatram Subramony; Augustine Chew; Berta A. Dinu; Dawn Goh; Pei Chin Lim; Kevin M. Monahan
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Paper Abstract

As design rules shrink and process windows become smaller, it is increasingly important to monitor exposure tool focus and exposure in order to maximize device yield. Economic considerations are forcing us to consider nearly all methods to improve yield across the wafer. For example, it is not uncommon in the industry that chips around the edge of the wafer have lower yield or device speed. These effects are typically due to process and exposure tool errors at the edge of the wafer. In order to improve yield and chip performance, we must characterize and correct for changes in the effective focus and exposure at the edge. Monitoring focus and exposure on product wafers is the most effective means for correction, since product wafers provide the most realistic view of exposure tool interactions with the process. In this work, on-product monitoring and correction is based on optical measurement using a compact line end shortening (LES) target that provides a unique separation of exposure and focus on product wafers. Our ultimate objective is indirect CD control, with maximum yield and little or no impact on productivity.

Paper Details

Date Published: 24 May 2004
PDF: 9 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535196
Show Author Affiliations
Brad J. Eichelberger, KLA-Tencor Corp. (United States)
Venkatram Subramony, TECH Semiconductor (Singapore)
Augustine Chew, KLA-Tencor Corp. (United States)
Berta A. Dinu, KLA-Tencor Corp. (United States)
Dawn Goh, TECH Semiconductor (Singapore)
Pei Chin Lim, TECH Semiconductor (Singapore)
Kevin M. Monahan, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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