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Proceedings Paper

Advances in resist pattern transfer process using 157-nm lithography
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Paper Abstract

The bilayer process we developed for 157-nm lithography uses a fluorine-containing silsesquioxane-type resist (F-SSQ). Gate fabrication is done by using a F-SSQ(90 nm)/organic film(200 nm)/poly-Si(150 nm)/SiO2(10 nm)/Si structure. The organic film works well as an anti-reflecting layer. Using a microstepper with a numerical aperture of 0.90 and optimizing the resist thickness, we made a 50-nm 1:1 line-and-space (L/S) pattern by using an alternative phase-shifting mask and made a 45-nm SRAM by using a chromeless phase lithography mask. Neither resist pattern footing nor undercutting was observed on the organic film. The reactive ion etching (RIE) selectivity between the F-SSQ and the organic film was sufficient (about 7), the resist pattern was transferred to the underlayer, and both 50-nm 1:1 L/S and 45-nm SRAM gate patterns were made using the organic film as an etching mask. Contact hole (C/H) fabrication is done by using a F-SSQ(105 nm)/organic film(400 nm)/tetraethyl orthosilicate (TEOS)-SiO2(1200 nm)/Si structure, and we made a 75-nm 1:1 C/H pattern by using the microstepper with a binary mask. The RIE selectivity was sufficient (about 15) for making high-aspect-ratio contact holes, and we made a 75-nm 1:1 C/H pattern in 1200-nm-thick TEOS. This bilayer process is thus promising for making 65-nm-node semiconductor devices.

Paper Details

Date Published: 14 May 2004
PDF: 10 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535177
Show Author Affiliations
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takuya Hagiwara, Semiconductor Leading Edge Technologies, Inc. (Japan)
Etsurou Kawaguchi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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