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Proceedings Paper

Synthesis of photoresists for 157-nm microlithography using CO2
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Paper Abstract

Norbornene-based monomers were synthesized to include fluorinated moieties and/or chemical amplification switching groups. Fluorinated homopolymers to be used as the basis of resist materials were synthesized from these monomers by addition polymerization using allylpalladium chloride dimmer. Monomers and polymers have been identified and partially characterized for important lithographic properties. A monomer containing a silsesquioxane group has been incorporated into this platform to enhance etch resistance. A monomer containing an acid-cleavable group has also been synthesized and will be incorporated into this platform.

Paper Details

Date Published: 14 May 2004
PDF: 5 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535165
Show Author Affiliations
Mary Kate Boggiano, Univ. of North Carolina/Chapel Hill (United States)
Joseph M. DeSimone, Univ. of North Carolina/Chapel Hill (United States)
North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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