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Proceedings Paper

157-nm chromeless phase lithography with extremely high numerical aperture
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Paper Abstract

Chromeless Phase Lithography is known as an effective resolution enhancement technique for isolated line patterns. We fabricated a chromeless phase lithography mask for 157-nm lithography, and evaluated the lithographic performance using a 0.90 numerical aperture 157-nm microstepper. To obtain the best resolution, illumination condition was optimized to conventional illumination with 0.7 partial coherence (σ) using lithography simulation. In the exposure experiment, 30-nm-wide isolated line, 30-nm-wide 140-nm-pitch line-and-space, and 30-nm-wide static random access memory (SRAM) gate patterns were resolved. Further lithography simulation results indicated that the resolution limit of 24-nm would be obtained by eliminating the image degradation factors such as the aberration, flare, and central obscuration.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535150
Show Author Affiliations
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takuya Hagiwara, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiji Matsuura, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga , Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani , Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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