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Proceedings Paper

How to print 100 nm contact hole with low NA 193 nm lithography
Author(s): Shang-ho Lin; Jui-mei Teng; Jian-hong Chen; Chun-hua Chen; Bang-ching Ho
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Paper Abstract

The continuous shrinkage of critical dimensions on 300 mm wafers has driven ArF lithography to resolve very small features for the next generation node. But the depth of focus (DOF) for 100 nm contact holes with a low NA of 0.75 is not adequate. Some resolution enhancement techniques (RETs), such as high transmission attenuated phase shifting masks, increase isolated contact hole DOF. Annular or quadrapole illumination improves dense hole resolution. However, they still cannot meet the requirement of logic circuit fabrication. To delineate 100-nm contact holes at 200-nm pitch, the resist process for 193 nm light was studied for the feasibility of a robust manufacturing process. In this paper we will discuss how to improve the process conditions of the thermal flow technique, as well as optimizing the illumination settings, prebake / post exposure bake temperatures, the mask dimensions and thermal flow temperature. Moreover, we will show the process window after the thermal flow process with optical proximity correction.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535141
Show Author Affiliations
Shang-ho Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jui-mei Teng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jian-hong Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-hua Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Bang-ching Ho, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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