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Proceedings Paper

LEEPL production tool: EBPrinter LEEPL-3000
Author(s): Norihiko Samoto; Hideaki Takano; Akihiro Endo; Akira Yoshida; Toyoji Fukui
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Paper Abstract

Low Energy Beam Proximity Projection Lithography (LEEPL) has emerged as a lithographic production tool, named as LEEPL-3000, for a 60nm-node DRAM and MPU. The characteristics of this system are wide exposure field, highly-accurate overlay, deep depth of focus (DOF) and little proximity effect. A scanner or a stepper mono-field is able to be exposed by this system and maximum exposure filed size is 46mm x 46mm exclusively for two-or four-divided complementary masks. The acceleration voltage is 2kV and the exposed current varies up to 20μA. The critical dimension (CD) uniformity, including a mask-pattern deviation, is about 8nm as 3σ at 100-nm line and space patterns in 46mm x 46mm filed. A CD-dose margin for 60-nm isolated lines is over 12% and the focus margin is greater than 20μm. The accuracy (3σ) of machine-itself is less than 14nm and that of machine-to-machine is 20-25nm.

Paper Details

Date Published: 20 May 2004
PDF: 9 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.535109
Show Author Affiliations
Norihiko Samoto, LEEPL Corp. (Japan)
Hideaki Takano, ACCRETECH (Japan)
Akihiro Endo, LEEPL Corp. (Japan)
Akira Yoshida, LEEPL Corp. (Japan)
Toyoji Fukui, ACCRETECH (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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