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Proceedings Paper

157-nm resist assessment by a full-field scanner
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Paper Abstract

Fluorinated polymers are key materials for single-layer resists used in 157-nm lithography. We have evaluated the potential of fluorinated polymer-based resists from the viewpoint of critical dimension (CD) control, using a 0.90 numerical aperture (NA) 157-nm micro-stepper with an alternating phase shift mask (alt-PSM). A resolution limit of 55-nm line-and-space patterns was obtained and the bake temperature dependence of the CD was found to be less than 2 nm/°C. We further evaluated these resists using a 0.80-NA FPA-5800FS1 157-nm scanner for full-field imaging with an alt-PSM. With these resists, 60-nm line-and-space patterns were resolved, and a depth of focus (DOF) of more than 400 nm for 100- and 80-nm line-and-space patterns was confirmed. The CD variation across the wafer for a 100-nm 1:1 dense line pattern was 3.3 nm (3σ). Although there is still a need to improve line edge roughness and dry etching resistance, in terms of CD control the fluorinated polymer-based resists have demonstrated sufficient potential for mass-production of 65-nm-node semiconductor devices and beyond.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535092
Show Author Affiliations
Akihiko Otoguro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiyuki Ishimaru, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, NEC Electronics Corp. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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