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Proceedings Paper

Overlay measurement tool up to 70-nm design rule
Author(s): Tatsuo Fukui; Hiroshi Aoki; Takeshi Endo; Tomoaki Yamada
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Paper Abstract

With the refined lithography techniques that exist today, it is critical for overlay measurement tools to perform with great measurement precision. Tool induced shift, TIS, is one of the key factors taken into consideration when evaluating the performance of an overlay measurement tool. TIS can be observed as a numerical value, and the measurement value is corrected by the TIS value. However, in an overlay measurement tool with TIS, the measured values could be shifted due to an interaction between TIS and a film stack structure of wafer. Therefore, it is essential to minimize the TIS values. We extend our study on the lens surface aspheric error, which is known to be one of the root causes of TIS. As this point of view, we constructed our overlay measurement tool, NRM-3100, and were able to decrease TIS values.

Paper Details

Date Published: 24 May 2004
PDF: 11 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.535007
Show Author Affiliations
Tatsuo Fukui, Nikon Corp. (Japan)
Hiroshi Aoki, Nikon Corp. (Japan)
Takeshi Endo, Nikon Corp. (Japan)
Tomoaki Yamada, Nikon Corp. (Japan)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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