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Proceedings Paper

Application of newly synthesized poly(hydroxystyrene-acrylate) copolymers to improve vacuum stability on E-beam resist for mask fabrication
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Paper Abstract

Recently, there are lots of interest in using chemical amplification (CA) on electron beam lithography for application to photo mask fabrication, direct writing, and projection printing. E-beam resists introducing chemically amplification concepts provide superior lithographic performance in comparison with traditional non CA E-Beam resist in particular high resolution and sensitivity. In first approach, we applied CA concepts to acetyl polymer based E-beam resist (resist thickness: 4,000Å), which can print fine images (<100nm), meet sensitivity (10μC/cm2), and have stability against post exposure delay (PED)(>10hrs) using 50KeV E-beam exposure tool. But, there is vacuum delay problem (40nm CD shrinkage/5hrs) due to thermally unstable blocking group in polymer. To prevent this vacuum delay problem due to polymer-inherent thermal instability in low-activation-energy-acetal polymer, we newly designed various poly(hydroxystyrene-acrylate) copolymer derivatives that contained thermally stable (acrylate) acid-blocking group. In this presentation, first we will discuss the chemistry of newly designed copolymer derivatives, and second, vacuum delay effects and other lithographic performances (resolution, sensitivity, line edge roughness) of these resist systems.

Paper Details

Date Published: 14 May 2004
PDF: 10 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534999
Show Author Affiliations
Dong-hwal Lee, Dongjin Semichem Co., Ltd. (South Korea)
Sang-jung Kim, Dongjin Semichem Co., Ltd. (South Korea)
Dong-uk Choi, Dongjin Semichem Co., Ltd. (South Korea)
Deogbae Kim, Dongjin Semichem Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd. (South Korea)
Chang-hwan Kim, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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