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Proceedings Paper

Theoretical simulation of extreme UV radiation source for lithography
Author(s): Kazumi Fujima; Katsunobu Nishihara; Toru Kawamura; Hiroyuki Furukawa; Takashi Kagawa; Fumihiro Koike; Richard More; Masakatsu Murakami; Takeshi Nishikawa; Akira Sasaki; Atsushi Sunahara; Vasillii Zhakhovskii; Takashi Fujimoto; Hajime Tanuma
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Paper Abstract

A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2 % bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 x 1011 W/cm2.

Paper Details

Date Published: 20 May 2004
PDF: 8 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.534989
Show Author Affiliations
Kazumi Fujima, Yamanashi Univ. (Japan)
Katsunobu Nishihara, Institute of Laser Engineering/Osaka Univ. (Japan)
Toru Kawamura, Institute for Laser Technology (Japan)
Hiroyuki Furukawa, Institute for Laser Technology (Japan)
Takashi Kagawa, Nara Women's Univ. (Japan)
Fumihiro Koike, Kitasato Univ. (Japan)
Richard More, National Institute for Fusion Science (Japan)
Masakatsu Murakami, Okayama Univ. (Japan)
Takeshi Nishikawa, Okayama Univ. (Japan)
Akira Sasaki, Japan Atomic Energy Research Institute (Japan)
Atsushi Sunahara, Institute for Laser Technology (Japan)
Vasillii Zhakhovskii, Yamanashi Univ. (Japan)
Takashi Fujimoto, Kyoto Univ. (Japan)
Hajime Tanuma, Tokyo Metropolitan Univ. (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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