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Proceedings Paper

Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography
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Paper Abstract

The printability of a dense line pattern and a model pattern using two configurations of absorber and buffer materials for the mask were examined through simulations. An absorber material with a small extinction coefficient of 0.025 must be thicker than one with a large extinction coefficient fo 0.040 to ensure sufficient reflectance contrast. However, a thick absorber enhances the adverse influence of off-axis incidence on the critical dimensions and pattern fidelity of a dense pattern layout, and the influence increases markedly when the incident angle is over 6.2°. Thus, and absorber material with a large extinction coefficient is advantageous in reducing the influence of off-axis incidence because it allows the use of a thinner layer. Another approach to reducing this influence is mask pattern correction. A newly developed algorithm makes the mask near-field energy for off-axis incidence the same as that for normal incidence. This simple correction compensates effectively for the influence of off-axis incidence and provides excellent pattern fidelity. The algorithm enable the use of absorber and buffer materials with a small extinction coefficient and also a large incident angle of over 6.2°.

Paper Details

Date Published: 20 May 2004
PDF: 11 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.534981
Show Author Affiliations
Minoru Sugawara, Association of Super-Advanced Electronics Technologies (Japan)
Takeo Hashimoto, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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