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Proceedings Paper

Properties of EUV emissions from laser-produced tin plasmas
Author(s): Yoshinori Shimada; Hiroaki Nishimura; Kazuhisa Hashimoto; Michiteru Yamaura; Keisuke Shigemori; Mitsuo Nakai; Shinsuke Fujioka; Shigeaki Uchida; Tomoharu Okuno; Takahiro Hibino; Nobuyoshi Ueda; Ryoji Matsui; Yezheng Tao; Keiji Nagai; Takayoshi Norimatsu; Toru Kawamura; Atsushi Sunahara; Katsunobu Nishihara; Noriaki Miyanaga; Masahiro Nakatsuka; Yasukazu Izawa; Chihiro Yamanaka
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Paper Abstract

Extreme ultraviolet (EUV) emission from laser produced plasma attracts much attention as a next generation lithography source. The characterization of EUV emission has been carried out using GEKKO XII laser system. The twelve beams irradiated tin or tin-oxide coated spherical targets uniformly and dependence of EUV spectra on laser intensity were obtained with a transmission grating spectrometer and two grazing incidence spectrometers. The EUV Conversion Efficiency (CE, the ratio of EUV energy at the wavelength of 13.5 nm with 2 % bandwidth to incident laser energy) was measured using an absolutely calibrated EUV calorimeter. Optimum laser intensities for the highest conversion were found to be 0.5- 1x1011 W/cm2 with CE of 3 %. The spectroscopic data indicate that shorter wavelength emission increases at higher laser intensities due to excessive heating beyond optimum temperatures (20- 40 eV). The CE was almost independent on the initial coating thickness down to 25 nm.

Paper Details

Date Published: 20 May 2004
PDF: 6 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.534959
Show Author Affiliations
Yoshinori Shimada, Institute for Laser Technology (Japan)
Hiroaki Nishimura, Institute of Laser Engineering/Osaka Univ. (Japan)
Kazuhisa Hashimoto, Institute for Laser Technology (Japan)
Michiteru Yamaura, Institute for Laser Technology (Japan)
Keisuke Shigemori, Institute of Laser Engineering/Osaka Univ. (Japan)
Mitsuo Nakai, Institute of Laser Engineering/Osaka Univ. (Japan)
Shinsuke Fujioka, Institute of Laser Engineering/Osaka Univ. (Japan)
Shigeaki Uchida, Institute of Laser Engineering/Osaka Univ. (Japan)
Tomoharu Okuno, Institute of Laser Engineering/Osaka Univ. (Japan)
Takahiro Hibino, Institute of Laser Engineering/Osaka Univ. (Japan)
Nobuyoshi Ueda, Institute of Laser Engineering/Osaka Univ. (Japan)
Ryoji Matsui, Institute of Laser Engineering/Osaka Univ. (Japan)
Yezheng Tao, Institute of Laser Engineering/Osaka Univ. (Japan)
Keiji Nagai, Institute of Laser Engineering/Osaka Univ. (Japan)
Takayoshi Norimatsu, Institute of Laser Engineering/Osaka Univ. (Japan)
Toru Kawamura, Institute for Laser Technology (Japan)
Atsushi Sunahara, Institute for Laser Technology (Japan)
Katsunobu Nishihara, Institute of Laser Engineering/Osaka Univ. (Japan)
Noriaki Miyanaga, Institute of Laser Engineering/Osaka Univ. (Japan)
Masahiro Nakatsuka, Institute of Laser Engineering/Osaka Univ. (Japan)
Yasukazu Izawa, Institute of Laser Engineering/Osaka Univ. (Japan)
Chihiro Yamanaka, Institute for Laser Technology (Japan)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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