Share Email Print
cover

Proceedings Paper

Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100 nm device performance
Author(s): Ji-Young Lee; Jangho Shin; Hyun-Woo Kim; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

ArF lithography is essential to develop a sub-100 nm device, however, line edge roughness (LER) and line width roughness (LWR) is playing a critical role due to the immaturity of photoresist and the lack of etch resistance. Researchers are trying to improve LER/LWR properties by optimizing photoresist materials and process conditions. In this paper, experiment results are presented to study the impact of LER/LWR to device performance so that the reasonable control range of LER/LWR can be defined. To implement the experiment, 80 nm node of single NMOS transistors were fabricated, which had various range of gate length, width, and LER/LWR. The amount of LER/LWR could be successfully controlled by applying different resist materials, defocus, and over etch time. Experimental results show that leakage current is significantly increased when LWR is greater than 10 nm. In addition, it is observed that both threshold voltage and on-off current variation get increased exponentially as gate width decreases.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534926
Show Author Affiliations
Ji-Young Lee, Samsung Electronics Co., Ltd. (South Korea)
Jangho Shin, Samsung Electronics Co., Ltd. (South Korea)
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top