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Proceedings Paper

Inspection performances of the electron beam inspection system based on projection electron microscopy
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Paper Abstract

The production prototype of an electron beam inspection system based on projection electron microscopy (EBI-PEM) has been developed. Inspection performances of the EBI-PEM were evaluated using the programmed defect standard wafer delivered by SELETE. We confirmed the EBI-PEM had the same inspection speed, 9 cm2/h, as the conventional electron beam inspection system based on scanning electron microscopy (EBI-SEM) under the following conditions: pixel size of 50 nm and defect capture rate of more than 80%. Furthermore, the EBI-PEM achieved an inspection speed of 36 cm2/h. This inspection speed is four times higher than that of the EBI-SEM. The EBI-PEM would be an effective tool for inspection subsequent to the 90 nm technology node generation.

Paper Details

Date Published: 24 May 2004
PDF: 8 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.534909
Show Author Affiliations
Ichirota Nagahama, Toshiba Corp. (Japan)
Atsushi Onishi, Toshiba Corp. (Japan)
Yuichiro Yamazaki, Toshiba Corp. (Japan)
Tohru Satake, Ebara Corp. (Japan)
Nobuharu Noji, Ebara Corp. (Japan)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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