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Proceedings Paper

Simulation technique for the PR flow process using a new viscous flow model
Author(s): Won-Young Chung; Tai-Kyung Kim; Jin-Young Yoon; Hyun-Woo Kim; Young-Kwan Park; Jeong-Taek Kong
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Paper Abstract

The PR(Photoresist) flow process after the development step has been used for patterning of sub-200nm contact holes as the design rule decreases rapidly. To optimize the layout design and process parameters, we develop the new viscous PR flow model which is verified for various PRs by experimental results. Using the model and simulation, we demonstrate the close agreement with VSEM(vertical scanning electron microscope) of the top corner rounding profile of PR and investigate the effect of the dominant variables such as the contact size, surrounding bulk density, and temperature. This model is also integrated with lithography simulator. The layout design and process condition of patterns with various contact sizes are optimized by using our new methodology. The viscous flow model linked to the lithography simulator can be effectively used in predicting the contact patterning process and optimizing the layout as well as analyzing defects.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534809
Show Author Affiliations
Won-Young Chung, Samsung Electronics Co., Ltd. (South Korea)
Tai-Kyung Kim, Samsung Electronics Co., Ltd. (South Korea)
Jin-Young Yoon, Samsung Electronics Co., Ltd. (South Korea)
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Kwan Park, Samsung Electronics Co., Ltd. (South Korea)
Jeong-Taek Kong, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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