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Proceedings Paper

Resist interaction in 193-/157-nm immersion lithography
Author(s): Shinji Kishimura; Masayuki Endo; Masaru Sasago
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Paper Abstract

We have investigated the interaction of resists with water and perfluoropolyether (PFPE) as immersion fluids. We found that some unique behaviors occurred in immersion lithography. An acetal protected poly(p-hydroxystyrene) type resist in water immersion showed decreased resist thickness after exposure. The deprotection reaction during exposure appeared to be accelerated by water. A COMA (cycloolefine-mareic anhydride alt-copolymer) type resist in water immersion showed an increased dissolution rate. FT-IR measurements indicated that the hydrolysis of maleic anhydride occurred during exposure and post-exposure baking. A reduction in the dissolution rate was observed in the immersion lithography of most resists. In water immersion, the formation of a surface insoluble layer and swelling was observed. We confirmed that a photochemical acid generator (PAG) or generated acid eluted into the water by TOF-SIMS. In PFPE immersion, we think that PFPE penetrating across the resist film blocks the penetration of the alkaline aqueous developer.

Paper Details

Date Published: 14 May 2004
PDF: 12 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534759
Show Author Affiliations
Shinji Kishimura, Matsushita Electric Industrial Co., Ltd. (Japan)
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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