Share Email Print
cover

Proceedings Paper

Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement
Author(s): Yoshinori Matsui; Shu Seki; Shiro Matsui; Seiichi Tagawa; Shigeo Irie; Toshiro Itani
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Effect of protecting groups to outgassing characteristics of F2 resists was investigated by using in-situ quadrupole mass spectrometry. The base polymers employed were protected fluorocyclic polymers (FCPs). The protecting groups employed were methoxymethyl (MOM), t-butoxycarbonyl (t-BOC), methoxyethoxymethyl (MOEOM), n-hexanoxymethyl (HOM), and neopentanoxymethyl (NOM) groups. Mass spectra of outgassed species were measured by quadrupole mass spectrometer in the exposure of FCPs with and without photoacidgenerators (PAGs). Kinetic traces of mass spectral intensity were also measured with regard to some noteworthy outgassed species related to deblocking reactions of protecting groups. In the exposure of FCP-HOM with PAGs and FCP-NOM with PAGs, one of the outgassed species related to deblocking reactions are mainly produced only during exposure although that kind of outgassed species originate from irradiated FCP-MOM with PAGs, FCP-MOEOM with PAGs, and FCP-t-BOC with PAGs not only during exposure but also after exposure. Some outgassed species related to the deblocking reactions after exposure are depressed by selecting appropriate protecting groups.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534742
Show Author Affiliations
Yoshinori Matsui, Osaka Univ. (Japan)
Shu Seki, Osaka Univ. (Japan)
Shiro Matsui, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Shigeo Irie, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

© SPIE. Terms of Use
Back to Top