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Proceedings Paper

Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist
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Paper Abstract

Sensitivity and resolution capability of photoresist depend on various parameters, such as efficiency of photoacid generation, base strength, types and concentration of protection groups on a polymer, as well as lithographic process condition. We have prepared polymers containing different protecting groups and investigated their effects on the sensitivity, and eventually, on ArF resist photolithographic behavior. Also, several different photoacid generators (PAGs) and bases were employed to study the influence of them on the resist sensitivity. We have changed process condition, especially, bake condition to discuss the role of bake temperature on the photochemical efficiency of the resist. It was found that the diffusion of the photogenerated acid and bases is the most significant factor to determine resist sensitivity than others. The detailed results will be discussed in this paper.

Paper Details

Date Published: 14 May 2004
PDF: 9 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534675
Show Author Affiliations
Jung-Woo Kim, Dongjin Semichem Co., Ltd. (South Korea)
Eun-Kyung Son, Dongjin Semichem Co., Ltd. (South Korea)
Sang-Hyang Lee, Dongjin Semichem Co., Ltd. (United States)
Deogbae Kim, Dongjin Semichem Co., Ltd. (South Korea)
Jaehyun Kim, Dongjin Semichem Co., Ltd. (South Korea)
Geunsu Lee, Hynix Semiconductor Inc. (South Korea)
Jae Chang Jung, Hynix Semiconductor Inc. (United States)
Cheol Kyu Bok, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (United States)
Ki Soo Shin, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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