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Proceedings Paper

Design and development of novel monomers and copolymers for 193-nm lithography
Author(s): Atsushi Otake; Emi Araya; Hikaru Momose; Ryuichi Ansai; Masayuki Tooyama; Tadayuki Fujiwara
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Paper Abstract

Design and development of novel monomers and copolymers for 193-nm lithography are described. At the present time, 193-nm lithography is required for 65-nm node and below. Novel monomers and copolymers are considered to be candidates for the development of higher performance resist materials. We focused our attention on pattern profile and line edge roughness. In design of novel monomers, molecular orbital calculation was adopted. It was revealed that CN-group has a higher potential than other polar groups. Novel monomers that contain CN-group were designed, synthesized and co-polymerized with traditional acrylate monomers. It is expected that these copolymers could be higher performance resist materials that could be used in 65-nm node and below.

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534628
Show Author Affiliations
Atsushi Otake, Mitsubishi Rayon Co., Ltd. (Japan)
Emi Araya, Mitsubishi Rayon Co., Ltd. (Japan)
Hikaru Momose, Mitsubishi Rayon Co., Ltd. (Japan)
Ryuichi Ansai, Mitsubishi Rayon Co., Ltd. (Japan)
Masayuki Tooyama, Mitsubishi Rayon Co., Ltd. (Japan)
Tadayuki Fujiwara, Mitsubishi Rayon Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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