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Proceedings Paper

Detection method for a T-topped profile in resist patterns by CD-SEM
Author(s): Atsuko Yamaguchi; Hiroshi Fukuda; Osamu Komuro; Shozo Yoneda; Takashi Iizumi
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Paper Abstract

A new method of detecting a T-topped profile in resist patterns is described. This method can determine a T-topped tendency from only a single top-down CD-SEM image. The idea is based on the relationship between the cross-sectional pattern profile and the shape of the bright area near the pattern edge in the top-down image. Two kinds of index for a T-topped tendency are defined using line-edge roughness, width of the bright area, and the correlation coefficient between the left and right borders of the area. Both indices agreed well with actual cross-sectional profiles of various resist patterns. In addition, it is found that these indices can be used to estimate defocus in the photolithography process.

Paper Details

Date Published: 24 May 2004
PDF: 7 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.534618
Show Author Affiliations
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Osamu Komuro, Hitachi High-Technologies Corp. (Japan)
Shozo Yoneda, Hitachi High-Technologies Corp. (Japan)
Takashi Iizumi, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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