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Proceedings Paper

Optical characterization of defects on patterned wafers: exploring light polarization
Author(s): Byoung Ho Lee; Soo-Bok Chin; Do Hyun Cho; Chang-Lyong Song; Jeong-Ho Yeo; Daniel Some; Silviu Reinhorn
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Paper Abstract

Polarization is an important and useful degree of freedom to explore defect SNR (Signal-to-Noise Ratio) improvement on repetitive memory devices. Sub-wavelength repetitive memory cell structures, especially in process layers of high-refractive-index dielectric and conducting materials, act as polarizer, resulting in a strong dependency of the optical response on polarization direction. In this study, STI layers of two typical memory products, Dynamic and Flash RAM, were selected to investigate defect detection capabilities with different polarization state of illumination light for different layouts. Several defect types, including void and scratch, are investigated. SNR improvement is observed primarily through linear polarization that is parallel to the pattern layout. Flash memory devices exhibit stronger birefringence than DRAM devices.

Paper Details

Date Published: 24 May 2004
PDF: 10 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.534491
Show Author Affiliations
Byoung Ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Soo-Bok Chin, Samsung Electronics Co., Ltd. (South Korea)
Do Hyun Cho, Samsung Electronics Co., Ltd. (South Korea)
Chang-Lyong Song, Samsung Electronics Co., Ltd. (South Korea)
Jeong-Ho Yeo, Applied Materials (Israel)
Daniel Some, Applied Materials (Israel)
Silviu Reinhorn, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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