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Proceedings Paper

Effect of PEB exhaust on resist CD for DUV process
Author(s): Shu-Fen Tsai; Yuh-Shyang Chiu; Chih-Horng Chien; Hann-Yii Gao; Chin-Yu Ku
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Paper Abstract

In this work, the effect of exhaust condition during Post Exposure Bake (PEB) on the critical dimension (CD) performance has been investigated for different DUV resists. Two kinds of PEB chamber cover designs have been tested to see the influence of exhaust flow on CD. It has been found that cleaning and adjusting of PEB exhaust flow will change the resist CD. To confirm the impact of PEB exhaust condition on production, resists for both lines and contact holes are verified by scanning electron microscope (SEM).

Paper Details

Date Published: 14 May 2004
PDF: 8 pages
Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534486
Show Author Affiliations
Shu-Fen Tsai, Vanguard International Semiconductor Corp. (Taiwan)
Yuh-Shyang Chiu, Vanguard International Semiconductor Corp. (Taiwan)
Chih-Horng Chien, Vanguard International Semiconductor Corp. (Taiwan)
Hann-Yii Gao, Vanguard International Semiconductor Corp. (Taiwan)
Chin-Yu Ku, Vanguard International Semiconductor Corp. (Taiwan)


Published in SPIE Proceedings Vol. 5376:
Advances in Resist Technology and Processing XXI
John L. Sturtevant, Editor(s)

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