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Proceedings Paper

Fine tune W-CMP process with alignment mark selection for optimal metal layer overlay and yield benefits
Author(s): Yuanting Cui; Albert So; Sean Louks
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Paper Abstract

Alignment performance and overlay control of metal layer from W-CMP process highly depends on the process influence on the alignment mark. While in a manufacturing environment, there could be introduced many changes into W-CMP process for defect reduction, cost reduction and yield improvement to further guarantee our success in this highly competitive industry. This study characterizes the CMP effect, especially erosion and dishing effect, polishing selectivity on alignment mark profile, which results in different alignment performance. We illustrate that how we seek solution to achieve an optimal alignment performance with the existing mark in according to different CMP slurry process by further fine tuning W-CMP process, such as over-polishing, final polish. The CMP effect on different alignment mark types is also evaluated; future alignment mark selection and design based on future CMP process, film deposition can thus be proposed. This work explains a good working method of optimizing alignment for process, fine tuning process for alignment mark, feed-backing solutions for mark selection while taking into considerations of cost, throughput, defect, yield.

Paper Details

Date Published: 24 May 2004
PDF: 12 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.534343
Show Author Affiliations
Yuanting Cui, Infineon Technologies AG (United States)
Albert So, Infineon Technologies AG (United States)
Sean Louks, Infineon Technologies AG (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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